CVE Vulnerabilities

CVE-2024-36432

Improper Write Handling in Limited-write Non-Volatile Memories

Published: Jul 15, 2024 | Modified: Aug 01, 2024
CVSS 3.x
N/A
Source:
NVD
CVSS 2.x
RedHat/V2
RedHat/V3
Ubuntu

An arbitrary memory write vulnerability was discovered in Supermicro X11DPG-HGX2, X11PDG-QT, X11PDG-OT, and X11PDG-SN motherboards with BIOS firmware before 4.4.

Weakness

The product does not implement or incorrectly implements wear leveling operations in limited-write non-volatile memories.

Extended Description

Non-volatile memories such as NAND Flash, EEPROM, etc. have individually erasable segments, each of which can be put through a limited number of program/erase or write cycles. For example, the device can only endure a limited number of writes, after which the device becomes unreliable. In order to wear out the cells in a uniform manner, non-volatile memory and storage products based on the above-mentioned technologies implement a technique called wear leveling. Once a set threshold is reached, wear leveling maps writes of a logical block to a different physical block. This prevents a single physical block from prematurely failing due to a high concentration of writes. If wear leveling is improperly implemented, attackers may be able to programmatically cause the storage to become unreliable within a much shorter time than would normally be expected.

Potential Mitigations

References